Role of contacts in metal/semi-insulating GaAs/metal structures: Symmetrical geometry

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F19%3A00521995" target="_blank" >RIV/68378271:_____/19:00521995 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1063/1.5119463" target="_blank" >http://dx.doi.org/10.1063/1.5119463</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1063/1.5119463" target="_blank" >10.1063/1.5119463</a>

Result language
angličtina
Original language name
Role of contacts in metal/semi-insulating GaAs/metal structures: Symmetrical geometry
Original language description
Comparative study of AuGeNi, Pt, Nd and Gd contacts on semi-insulating (SI) GaAs with respect to the backside quasi-ohmic AuGeNi contact in symmetrical geometry is investigated. Fabricated diode structures are characterized by the current- and capacitance-voltage dependencies. Each of contacts gives an original set of characteristics and current lower that corresponding to the ohmic, bulk limited transport in the initial, low bias (<0.02 V) region. Observed increase of UV photosensitivity in the structure with Gd contact is explained by the formation of a heterojunction Au/Gd2O3/SI-GaAs.n
Czech name
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Czech description
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Type
D - Article in proceedings
CEP classification
—
OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Project
—
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2019
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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