Study of threading dislocation density reduction in AlGaN epilayers by Monte Carlo simulation of high-resolution reciprocal-space maps of a two-layer system

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F13%3A10133655" target="_blank" >RIV/00216208:11320/13:10133655 - isvavai.cz</a>

Result on the web

<a href="http://dx.doi.org/10.1107/S0021889812043051" target="_blank" >http://dx.doi.org/10.1107/S0021889812043051</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1107/S0021889812043051" target="_blank" >10.1107/S0021889812043051</a>

Result language

angličtina

Original language name

Study of threading dislocation density reduction in AlGaN epilayers by Monte Carlo simulation of high-resolution reciprocal-space maps of a two-layer system

Original language description

High-resolution X-ray diffraction in coplanar and noncoplanar geometries has been used to investigate the influence of an SiNx nano-mask in the reduction of the threading dislocation (TD) density of high-quality AlGaN epitaxial layers grown on sapphire substrates. Our developed model, based on a Monte Carlo method, was applied to the simulation of the reciprocal-space maps of a two-layer system. Good agreement was found between the simulation and the experimental data, leading to an accurate determination of the dislocation densities as a function of the overgrowth layer thickness. The efficiency of the SiNx nano-mask was defined as the ratio of the TD densities in the AlGaN layers below and above the mask. A significant improvement in the AlGaN layerquality was achieved by increasing the overgrowth layer thickness, and a TD density reduction scaling law was established.

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

BM - Solid-state physics and magnetism

OECD FORD branch

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Project

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Continuities

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year

2013

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Journal of Applied Crystallography

ISSN

0021-8898

e-ISSN

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Volume of the periodical

46

Issue of the periodical within the volume

1

Country of publishing house

DK - DENMARK

Number of pages

8

Pages from-to

120-127

UT code for WoS article

000313658700015

EID of the result in the Scopus database

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