Improvement of GaN crystalline quality by SiNx layer grown by MOVPE
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F19%3A00520842" target="_blank" >RIV/68378271:_____/19:00520842 - isvavai.cz</a>
Result on the web
<a href="http://hdl.handle.net/11104/0305500" target="_blank" >http://hdl.handle.net/11104/0305500</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.3952/physics.v59i4.4134" target="_blank" >10.3952/physics.v59i4.4134</a>
Alternative languages
Result language
angličtina
Original language name
Improvement of GaN crystalline quality by SiNx layer grown by MOVPE
Original language description
In this work the mechanism which helps to reduce the dislocation density by deposition of a SiNx interlayer is discussed. It is shown that the dislocation reduction by SiNx interlayer deposition is influenced by dislocation density in the underlying GaN layers. The SiNx interlayer is very effective when the original dislocation density is high, while in the case of lower dislocation density the deposition of SiNx is not effective for crystal quality improvement. The most probable mechanism is the annihilation of bended neighbouring dislocations during the coalescence of 3D islands. The SiNx layer cannot serve as a barrier for dislocations, since it is probably dissolved during the following GaN growth and dissolved Si atoms are incorporated into the above-grown GaN layer which stimulates the 3D island formation.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)
Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2019
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Lithuanian Journal of Physics
ISSN
1648-8504
e-ISSN
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Volume of the periodical
59
Issue of the periodical within the volume
4
Country of publishing house
LT - LITHUANIA
Number of pages
8
Pages from-to
179-186
UT code for WoS article
000505595100002
EID of the result in the Scopus database
2-s2.0-85078539856