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Growth and characterization of stacking fault reduced GaN( 1 0 1($)over-bar 3) on sapphire

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F13%3A10134082" target="_blank" >RIV/00216208:11320/13:10134082 - isvavai.cz</a>

  • Result on the web

    <a href="http://dx.doi.org/10.1088/0022-3727/46/12/125308" target="_blank" >http://dx.doi.org/10.1088/0022-3727/46/12/125308</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1088/0022-3727/46/12/125308" target="_blank" >10.1088/0022-3727/46/12/125308</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Growth and characterization of stacking fault reduced GaN( 1 0 1($)over-bar 3) on sapphire

  • Original language description

    We present a transmission electron microscope (TEM) and x-ray diffraction (XRD) study of metalorganic vapor phase epitaxy grown GaN(1 0 ($) over bar1 3) layers on m-sapphire with Al(Ga) N interlayers. The interlayers are demonstrated to be beneficial inreducing the stacking fault (SF) density by more than 2.5 orders of magnitude from >2 x 106 cm(-1) to < 5 x 103 cm(-1) as determined by TEM. XRD measurements along the GaN(1 0 <($)over bar>1 2) to the GaN(1 0 ($) over bar1 5) reflection reveal a diffraction component originating in the basal plane SFs. Fitting the XRD signal enables a fast and simple determination of SF type and density which can even distinguish between the GaN buffer and the upper GaN layers and which is in reasonable agreement with TEM measurements.

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

  • CEP classification

    BM - Solid-state physics and magnetism

  • OECD FORD branch

Result continuities

  • Project

  • Continuities

    I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Others

  • Publication year

    2013

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    Journal of Physics D - Applied Physics

  • ISSN

    0022-3727

  • e-ISSN

  • Volume of the periodical

    46

  • Issue of the periodical within the volume

    12

  • Country of publishing house

    GB - UNITED KINGDOM

  • Number of pages

    4

  • Pages from-to

  • UT code for WoS article

    000315413600026

  • EID of the result in the Scopus database