Growth and characterization of stacking fault reduced GaN( 1 0 1($)over-bar 3) on sapphire
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F13%3A10134082" target="_blank" >RIV/00216208:11320/13:10134082 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1088/0022-3727/46/12/125308" target="_blank" >http://dx.doi.org/10.1088/0022-3727/46/12/125308</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1088/0022-3727/46/12/125308" target="_blank" >10.1088/0022-3727/46/12/125308</a>
Alternative languages
Result language
angličtina
Original language name
Growth and characterization of stacking fault reduced GaN( 1 0 1($)over-bar 3) on sapphire
Original language description
We present a transmission electron microscope (TEM) and x-ray diffraction (XRD) study of metalorganic vapor phase epitaxy grown GaN(1 0 ($) over bar1 3) layers on m-sapphire with Al(Ga) N interlayers. The interlayers are demonstrated to be beneficial inreducing the stacking fault (SF) density by more than 2.5 orders of magnitude from >2 x 106 cm(-1) to < 5 x 103 cm(-1) as determined by TEM. XRD measurements along the GaN(1 0 <($)over bar>1 2) to the GaN(1 0 ($) over bar1 5) reflection reveal a diffraction component originating in the basal plane SFs. Fitting the XRD signal enables a fast and simple determination of SF type and density which can even distinguish between the GaN buffer and the upper GaN layers and which is in reasonable agreement with TEM measurements.
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
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Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2013
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Journal of Physics D - Applied Physics
ISSN
0022-3727
e-ISSN
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Volume of the periodical
46
Issue of the periodical within the volume
12
Country of publishing house
GB - UNITED KINGDOM
Number of pages
4
Pages from-to
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UT code for WoS article
000315413600026
EID of the result in the Scopus database
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