Melt growth and post-grown annealing of semiinsulating (CdZn)Te by vertical gradient freeze method
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F13%3A10140053" target="_blank" >RIV/00216208:11320/13:10140053 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1002/crat.201300006" target="_blank" >http://dx.doi.org/10.1002/crat.201300006</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1002/crat.201300006" target="_blank" >10.1002/crat.201300006</a>
Alternative languages
Result language
angličtina
Original language name
Melt growth and post-grown annealing of semiinsulating (CdZn)Te by vertical gradient freeze method
Original language description
We present results of development of CdZnTe semi-insulating crystals prepared by Vertical Gradient Freeze method in a 4-zone furnace. We applied the way of growth of the crystal from the top when the first crystallization seed is created on the surface of the melt. The typical height of the crystals is 5 cm. Resistivity and photoconductivity profiles measured along the growth axis by contactless method are compared and their mutual correlation is explained based on a model of relative shift of the Fermilevel and the midgap level present in the material. The influence of the Fermi level on electron trapping and recombination is summarized. We present here results of a two-step annealing method aimed at reduction of Te inclusions while keeping the resistivity high. We employed CdTe:Cl VGF grown samples to eliminate Te inclusions observed in as grown crystals by two-step post grown annealing in Cd and Te atmosphere and present a model of the processes leading to high resistivity material
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
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Continuities
S - Specificky vyzkum na vysokych skolach<br>I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2013
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Crystal Research and Technology
ISSN
0232-1300
e-ISSN
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Volume of the periodical
48
Issue of the periodical within the volume
4
Country of publishing house
DE - GERMANY
Number of pages
7
Pages from-to
214-220
UT code for WoS article
000317610800009
EID of the result in the Scopus database
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