Characterization of CdTe and (CdZn)Te detectors with different metal contacts
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F13%3A10189299" target="_blank" >RIV/00216208:11320/13:10189299 - isvavai.cz</a>
Result on the web
<a href="http://proceedings.spiedigitallibrary.org/" target="_blank" >http://proceedings.spiedigitallibrary.org/</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1117/12.2023233" target="_blank" >10.1117/12.2023233</a>
Alternative languages
Result language
angličtina
Original language name
Characterization of CdTe and (CdZn)Te detectors with different metal contacts
Original language description
The influence of different types of surface etching and surface passivation of high resistivity CdZnTe-based semiconductor detector material was studied with aim to find optimal conditions to improve the properties of metal-semiconductor contact.
Czech name
—
Czech description
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Classification
Type
D - Article in proceedings
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
—
Result continuities
Project
—
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2013
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
Proceeding of SPIE
ISBN
978-0-8194-9702-4
ISSN
0277-786X
e-ISSN
—
Number of pages
6
Pages from-to
"88521F"
Publisher name
SPIE
Place of publication
USA
Event location
San Diego, USA
Event date
Aug 25, 2013
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
000326643800025