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Absence of quantum confinement effects in the photoluminescence of Si3N4-embedded Si nanocrystals

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F14%3A10286163" target="_blank" >RIV/00216208:11320/14:10286163 - isvavai.cz</a>

  • Result on the web

    <a href="http://dx.doi.org/10.1063/1.4878699" target="_blank" >http://dx.doi.org/10.1063/1.4878699</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1063/1.4878699" target="_blank" >10.1063/1.4878699</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Absence of quantum confinement effects in the photoluminescence of Si3N4-embedded Si nanocrystals

  • Original language description

    Superlattices of Si-rich silicon nitride and Si3N4 are prepared by plasma-enhanced chemical vapor deposition and, subsequently, annealed at 1150 degrees C to form size-controlled Si nanocrystals (Si NCs) embedded in amorphous Si3N4. Despite well definedstructural properties, photoluminescence spectroscopy (PL) reveals inconsistencies with the typically applied model of quantum confined excitons in nitride-embedded Si NCs. Time-resolved PL measurements demonstrate 10(5) times faster time-constants thantypical for the indirect band structure of Si NCs. Furthermore, a pure Si3N4 reference sample exhibits a similar PL peak as the Si NC samples. The origin of this luminescence is discussed in detail on the basis of radiative defects and Si3N4 band tail states in combination with optical absorption measurements. The apparent absence of PL from the Si NCs is explained conclusively using electron spin resonance data from the Si/Si3N4 interface defect literature. In addition, the role of Si3N

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

  • CEP classification

    BH - Optics, masers and lasers

  • OECD FORD branch

Result continuities

  • Project

    <a href="/en/project/7E11021" target="_blank" >7E11021: Silicon Nanodots for Solar Cell Tandem</a><br>

  • Continuities

    P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Others

  • Publication year

    2014

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    Journal of Applied Physics

  • ISSN

    0021-8979

  • e-ISSN

  • Volume of the periodical

    115

  • Issue of the periodical within the volume

    20

  • Country of publishing house

    US - UNITED STATES

  • Number of pages

    9

  • Pages from-to

    "204301-1"-"204301-9"

  • UT code for WoS article

    000337143500074

  • EID of the result in the Scopus database