Absence of quantum confinement effects in the photoluminescence of Si3N4-embedded Si nanocrystals
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F14%3A10286163" target="_blank" >RIV/00216208:11320/14:10286163 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1063/1.4878699" target="_blank" >http://dx.doi.org/10.1063/1.4878699</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1063/1.4878699" target="_blank" >10.1063/1.4878699</a>
Alternative languages
Result language
angličtina
Original language name
Absence of quantum confinement effects in the photoluminescence of Si3N4-embedded Si nanocrystals
Original language description
Superlattices of Si-rich silicon nitride and Si3N4 are prepared by plasma-enhanced chemical vapor deposition and, subsequently, annealed at 1150 degrees C to form size-controlled Si nanocrystals (Si NCs) embedded in amorphous Si3N4. Despite well definedstructural properties, photoluminescence spectroscopy (PL) reveals inconsistencies with the typically applied model of quantum confined excitons in nitride-embedded Si NCs. Time-resolved PL measurements demonstrate 10(5) times faster time-constants thantypical for the indirect band structure of Si NCs. Furthermore, a pure Si3N4 reference sample exhibits a similar PL peak as the Si NC samples. The origin of this luminescence is discussed in detail on the basis of radiative defects and Si3N4 band tail states in combination with optical absorption measurements. The apparent absence of PL from the Si NCs is explained conclusively using electron spin resonance data from the Si/Si3N4 interface defect literature. In addition, the role of Si3N
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BH - Optics, masers and lasers
OECD FORD branch
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Result continuities
Project
<a href="/en/project/7E11021" target="_blank" >7E11021: Silicon Nanodots for Solar Cell Tandem</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2014
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Journal of Applied Physics
ISSN
0021-8979
e-ISSN
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Volume of the periodical
115
Issue of the periodical within the volume
20
Country of publishing house
US - UNITED STATES
Number of pages
9
Pages from-to
"204301-1"-"204301-9"
UT code for WoS article
000337143500074
EID of the result in the Scopus database
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