Effect of Si3N4-Mediated Inversion Layer on the Electroluminescence Properties of Silicon Nanocrystal Superlattices
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F18%3A10384575" target="_blank" >RIV/00216208:11320/18:10384575 - isvavai.cz</a>
Result on the web
<a href="https://doi.org/10.1002/aelm.201700666" target="_blank" >https://doi.org/10.1002/aelm.201700666</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1002/aelm.201700666" target="_blank" >10.1002/aelm.201700666</a>
Alternative languages
Result language
angličtina
Original language name
Effect of Si3N4-Mediated Inversion Layer on the Electroluminescence Properties of Silicon Nanocrystal Superlattices
Original language description
The achievement of an efficient all-Si electrically-pumped light emitter is a major milestone in present optoelectronics still to be fulfilled. Silicon nanocrystals (Si NCs) are an attractive material which, by means of the quantum confinement effect, allow attaining engineered bandgap visible emission from Si by controlling the NC size. In this work, SiO2-embedded Si NCs are employed as an active layer within a light-emitting device structure. It is demonstrated that the use of an additional thin Si3N4 interlayer within the metal-insulator-semiconductor device design induces an enhanced minority carrier injection from the substrate, which in turn increases the efficiency of sequential carrier injection under pulsed electrical excitation. This results in a substantial increase in the electroluminescence efficiency of the device. Here, the effect of this Si3N4 interlayer on the structural, optical, electrical, and electro-optical properties of a Si NC-based light emitter is reported, and the physics underlying these results is discussed.
Czech name
—
Czech description
—
Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
—
OECD FORD branch
10306 - Optics (including laser optics and quantum optics)
Result continuities
Project
<a href="/en/project/GC16-09745J" target="_blank" >GC16-09745J: Understanding the Luminescence Efficiency of Silicon Quantum Dots</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2018
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Advanced Electronic Materials
ISSN
2199-160X
e-ISSN
—
Volume of the periodical
4
Issue of the periodical within the volume
5
Country of publishing house
DE - GERMANY
Number of pages
10
Pages from-to
—
UT code for WoS article
000431958800013
EID of the result in the Scopus database
2-s2.0-85044220620