Silicon nanocrystals-based electroluminescent resistive switching device
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F19%3A10405409" target="_blank" >RIV/00216208:11320/19:10405409 - isvavai.cz</a>
Result on the web
<a href="https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=H3Bk_-jWfy" target="_blank" >https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=H3Bk_-jWfy</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1063/1.5119299" target="_blank" >10.1063/1.5119299</a>
Alternative languages
Result language
angličtina
Original language name
Silicon nanocrystals-based electroluminescent resistive switching device
Original language description
In the last few years, the emergence of studies concerning the resistive switching (RS) phenomenon has resulted in the finding of a large amount of materials being capable of acting as an active layer in such devices, i.e., the layer where the change in resistance takes place. Whereas the normal operation consists of the electrical readout of the modified resistance state of the device after electrical writing, electro-photonic approaches seek the involvement of light in these devices, be it either for the active Set or Reset operations or the readout. We propose in this work silicon nanocrystal multilayers (Si NC MLs) as an active material for being used in RS devices, taking advantage of their outstanding optical properties. The resistance states of Si NC MLs were obtained by electrical excitation, whose readout is carried out by electrical and electro-optical means, thanks to a distinguishable electroluminescence emission under each state. To achieve this, we report on an adequate design that combines both the Si NC MLs with ZnO as a transparent conductive oxide, whose material properties ensure the device RS performance while allowing the electro-optical characterization. Overall, such an occurrence states the demonstration of a Si NCs-based electroluminescent RS device, which paves the way for their future integration into photonic integrated circuits. (C) 2019 Author(s).
Czech name
—
Czech description
—
Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
—
OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)
Result continuities
Project
—
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2019
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Journal of Applied Physics
ISSN
0021-8979
e-ISSN
—
Volume of the periodical
126
Issue of the periodical within the volume
14
Country of publishing house
US - UNITED STATES
Number of pages
10
Pages from-to
144501
UT code for WoS article
000503995300021
EID of the result in the Scopus database
2-s2.0-85073246714