Electrooptical Characterization of ZnS:Mn Thin-film Electroluminescent Devices

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F03%3APU37672" target="_blank" >RIV/00216305:26220/03:PU37672 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Electrooptical Characterization of ZnS:Mn Thin-film Electroluminescent Devices
Original language description
Electrical characterization methods for the analysis of alternating current thin-film electroluminescent (ACTFEL) devices are presented. Particular emphasis is devoted to characterization techniques because ACTFEL devices are electro-optic display devices whose performance is to a large extent determined by their electrical properties. Steady-state electrical characterization methods discussed in this paper include charge-voltage (Q-V), capacitance-voltage (CV), internal charge-phosphor field (Q-Fp),, and maximum charge-maximum applied voltage (Qmax-Vmax) analysis. These electrical characterization methods are illustrated by reviewing relevant results obtained from the analysis of evaporated ZnS:Mn devices.
Czech name
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Czech description
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Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year
2003
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
The 10th EDS 2003 Electronic Devices and Systems Conference
ISBN
80-2142452-4
ISSN
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e-ISSN
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Number of pages
4
Pages from-to
287-290
Publisher name
Ing. Zdeněk Novotný, CSc.
Place of publication
Brno
Event location
Brno
Event date
Sep 9, 2003
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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