Radiation emission from wrinkled SiGe/SiGe nanostructure

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61388998%3A_____%2F10%3A00349035" target="_blank" >RIV/61388998:_____/10:00349035 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Radiation emission from wrinkled SiGe/SiGe nanostructure

Original language description

Semiconductor optical emitters radiate light via band-to-band optical transitions. Here, a different mechanism of radiation emission, which is not related to the energy band of the materials, is proposed. In the case of carriers traveling along a sinusoidal trajectory through a wrinkled nanostructure, radiation was emitted via changes in their velocity in a manner analogous to synchrotron radiation. The radiated frequency of wrinkled SiGe/SiGe nanostructure was found to cover a wide spectrum with radiation power levels of the order of submilliwatts. Thus, this nanostructure can be used as a Si-based optical emitter and it will enable the integration of optoelectronic devices on a wafer.

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

BM - Solid-state physics and magnetism

OECD FORD branch

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Project

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Continuities

Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2010

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Applied Physics Letters

ISSN

0003-6951

e-ISSN

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Volume of the periodical

96

Issue of the periodical within the volume

11

Country of publishing house

US - UNITED STATES

Number of pages

3

Pages from-to

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UT code for WoS article

000275825200051

EID of the result in the Scopus database

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