HAXPES study of CeOx thin film-silicon oxide interface

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F14%3A10288967" target="_blank" >RIV/00216208:11320/14:10288967 - isvavai.cz</a>

Result on the web

<a href="http://dx.doi.org/10.1016/j.apsusc.2014.02.048" target="_blank" >http://dx.doi.org/10.1016/j.apsusc.2014.02.048</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.apsusc.2014.02.048" target="_blank" >10.1016/j.apsusc.2014.02.048</a>

Result language

angličtina

Original language name

HAXPES study of CeOx thin film-silicon oxide interface

Original language description

Investigation of cerium oxide thin film deposition on silicon and silicon oxide is important due to many possible applications of cerium oxide based micro-systems in electronics and catalysis. rf-Magnetron sputtering is technologically the most suitablemethod of preparation of such systems. Mechanism of film growth is strongly influenced by interaction of Ce atoms with the substrate and their oxidation by oxygen containing rf plasma. We show using hard X-ray photoelectron spectroscopy with high information depth that cerium is reducing silicon oxide by forming complex silicate phase at the interface with Ce in the 3+ state. For this reason composition of very thin films of cerium oxide is strongly influenced by thin film-substrate interaction. A coating of the silicon oxide substrate by an intermediate thin carbon film provides conductive substrate for electrocatalytic applications and decreases the silicon oxide substrates-cerium oxide interaction essentially. (C) 2014 Elsevier B.V.

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

BM - Solid-state physics and magnetism

OECD FORD branch

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Project

Result was created during the realization of more than one project. More information in the Projects tab.

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>S - Specificky vyzkum na vysokych skolach<br>I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year

2014

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Applied Surface Science

ISSN

0169-4332

e-ISSN

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Volume of the periodical

303

Issue of the periodical within the volume

červen

Country of publishing house

NL - THE KINGDOM OF THE NETHERLANDS

Number of pages

8

Pages from-to

46-53

UT code for WoS article

000334293200007

EID of the result in the Scopus database

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