Crystallization dynamics and interface stability of strontium titanate thin films on silicon

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F15%3A10321550" target="_blank" >RIV/00216208:11320/15:10321550 - isvavai.cz</a>

Result on the web

<a href="http://dx.doi.org/10.1107/S160057671500240X" target="_blank" >http://dx.doi.org/10.1107/S160057671500240X</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1107/S160057671500240X" target="_blank" >10.1107/S160057671500240X</a>

Result language

angličtina

Original language name

Crystallization dynamics and interface stability of strontium titanate thin films on silicon

Original language description

Different physical vapor deposition methods have been used to fabricate strontium titanate thin films. Within the binary phase diagram of SrO and TiO2 the stoichiometry ranges from Ti rich to Sr rich, respectively. The crystallization of these amorphousSrTiO3 layers is investigated by in situ grazing-incidence X-ray diffraction using synchrotron radiation. The crystallization dynamics and evolution of the lattice constants as well as crystallite sizes of the SrTiO3 layers were determined for temperatures up to 1223K under atmospheric conditions applying different heating rates. At approximately 473K, crystallization of perovskite-type SrTiO3 is initiated for Sr-rich electron beam evaporated layers, whereas Sr-depleted sputter-deposited thin films crystallize at 739K. During annealing, a significant diffusion of Si from the substrate into the SrTiO3 layers occurs in the case of Sr-rich composition. This leads to the formation of secondary silicate phases which are observed by X-ray dif

Czech name

—

Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

BM - Solid-state physics and magnetism

OECD FORD branch

—

Project

—

Continuities

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year

2015

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Journal of Applied Crystallography

ISSN

0021-8898

e-ISSN

—

Volume of the periodical

48

Issue of the periodical within the volume

-

Country of publishing house

DK - DENMARK

Number of pages

8

Pages from-to

393-400

UT code for WoS article

000352229100010

EID of the result in the Scopus database

2-s2.0-84926306772