Photoluminescence study of surface treatment effects on detector-grade CdTe:In
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F16%3A10328933" target="_blank" >RIV/00216208:11320/16:10328933 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1088/0268-1242/31/2/025014" target="_blank" >http://dx.doi.org/10.1088/0268-1242/31/2/025014</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1088/0268-1242/31/2/025014" target="_blank" >10.1088/0268-1242/31/2/025014</a>
Alternative languages
Result language
angličtina
Original language name
Photoluminescence study of surface treatment effects on detector-grade CdTe:In
Original language description
We studied the influence of standard surface treatment techniques on the generation of defects with deep levels that can act as trapping and recombination centers for photo-generated carriers in detector-grade CdTe:In material grown via the Vertical-Gradient-Freeze (VGF) method. We measured room-temperature contactless resistivity, photoconductivity, detector performance and low-temperature photoluminescence dependence on the surface preparation of the material and observed changes in the resistivity and photoluminescence signal after etching a 5 mu m thick surface layer. We found four deep levels in the range of 0.8-1.3 eV. The relative ratio of their photoluminescence maxima changes after mechanical polishing and chemical etching treatment. A deep level at similar to 0.9 eV seems to be connected to mechanical stress induced by polishing of the sample with a standard 1 mu m alumina abrasive and influences the charge collection efficiency of the detector.
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
<a href="/en/project/GA15-05259S" target="_blank" >GA15-05259S: Surface passivation of CdTe/CdZnTe radiation detectors.</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2016
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Semiconductor Science and Technology
ISSN
0268-1242
e-ISSN
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Volume of the periodical
31
Issue of the periodical within the volume
2
Country of publishing house
GB - UNITED KINGDOM
Number of pages
7
Pages from-to
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UT code for WoS article
000372412900016
EID of the result in the Scopus database
2-s2.0-84955462147