Photoluminescence of CdTe:In the spectral range around 1.1 eV
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F16%3A10328934" target="_blank" >RIV/00216208:11320/16:10328934 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1016/j.jlumin.2016.04.019" target="_blank" >http://dx.doi.org/10.1016/j.jlumin.2016.04.019</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.jlumin.2016.04.019" target="_blank" >10.1016/j.jlumin.2016.04.019</a>
Alternative languages
Result language
angličtina
Original language name
Photoluminescence of CdTe:In the spectral range around 1.1 eV
Original language description
Temperature and excitation dependences of photoluminescence (PL) spectra of a slightly In-doped CdTe crystal were investigated, particularly in the spectral range of the "1.1 eV" PL band, i.e. in the interval of 0.9-1.25 eV. Both above-bandgap and below-bandgap excitations were employed. Three components of the "1.1 eV" band with the PL maxima at around 1.19 eV, 1.13 eV, and 1.03 eV were distinguished. The component with a PL maximum at 1.19 eV vanishes above 40 K. It can be attributed to a recombination of a thermally unstable state localized at a defect. The excitation spectrum of the second component with a maximum at 1.13 eV indicates that a transition in a deep localized center takes place. The "1.13 eV" component prevails at higher temperatures with below-bandgap excitation. The "1.03 eV" component can be related to an effective recombination center, probably to a complex of deep donor and deep acceptor. This component is the strongest one at higher temperatures and under above-bandgap excitation. Our present knowledge does not allow us to attribute the PL spectra to particular defects.
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
<a href="/en/project/GA15-05259S" target="_blank" >GA15-05259S: Surface passivation of CdTe/CdZnTe radiation detectors.</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2016
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Journal of Luminescence
ISSN
0022-2313
e-ISSN
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Volume of the periodical
177
Issue of the periodical within the volume
1
Country of publishing house
NL - THE KINGDOM OF THE NETHERLANDS
Number of pages
11
Pages from-to
71-81
UT code for WoS article
000377997700011
EID of the result in the Scopus database
2-s2.0-84964757864