Deposition of DLC:Si(O) Films in Low Pressure Discharges
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216224%3A14310%2F01%3A00003099" target="_blank" >RIV/00216224:14310/01:00003099 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Deposition of DLC:Si(O) Films in Low Pressure Discharges
Original language description
Study of the properties of silicon doped DLC films deposited in rf low pressure discharges. Investigation of the influence of the deposition parameters on the film properties.
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
BL - Plasma physics and discharge through gases
OECD FORD branch
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Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2001
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
Proceedings of 13th Symposium on Application of Plasma Processes
ISBN
80-223-1573-7
ISSN
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e-ISSN
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Number of pages
4
Pages from-to
43
Publisher name
Dept. of Plasma Physics & Inst. of Physics, Comenius University Bratislava (Slovakia)
Place of publication
Bratislava (Slovakia)
Event location
Bratislava (Slovakia)
Event date
Jan 1, 2001
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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