Advanced X-ray diffraction imaging techniques for semiconductor wafer characterisation

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216224%3A14310%2F02%3A00007825" target="_blank" >RIV/00216224:14310/02:00007825 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Advanced X-ray diffraction imaging techniques for semiconductor wafer characterisation

Original language description

Wafer quality inspection and defect analysis are crucial for improvements of the wafer fabrication technology as well as for the correlation of device properties with the processes of wafer treating. This work demonstrates trends of high-resolution X-raydiffraction imaging techniques with synchrotron radiation sources and their capability for detailed quality inspection of wafers concerning their structural perfection. We apply these methods to visualise and to characterise the defects and deformationsinduced by growing, cutting, grinding, etching and gluing in the production of semiconductor wafers (in particular Si and GaAs wafers) and in ultra-thin wafers. We present synchrotron topography and synchrotron area diffractometry methods to analyse qualitatively and quantitatively: dislocations and lineages, micro-defects and micro-cracks, wafer tilts and warpages, tensors of local lattice rotations.

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

BM - Solid-state physics and magnetism

OECD FORD branch

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Project

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Continuities

Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2002

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Materials Structure

ISSN

1211-5894

e-ISSN

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Volume of the periodical

9

Issue of the periodical within the volume

2

Country of publishing house

CZ - CZECH REPUBLIC

Number of pages

2

Pages from-to

87-88

UT code for WoS article

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EID of the result in the Scopus database

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