Optical characterization of ZnSe thin films

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216224%3A14310%2F03%3A00009333" target="_blank" >RIV/00216224:14310/03:00009333 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Optical characterization of ZnSe thin films
Original language description
In this paper the optical method based on multisample modification variable angle spectroscopic ellipsometry (VASE) is used to characterize thin films of ZnSe prepared by molecular beam epitaxy onto GaAs single crystal substrates. It is found that this method can be employed for determining the spectral dependences of the optical constants and values of the thicknesses of the films mentioned. Moreover, it is shown that using this method the RMS values of the heights and the values of the correlation length characterizing roughness irregularities of the upper boundaries of the films can be determined as well. The application of the method is illustrated by means of characterizing six samples of the ZnSe-films exhibiting different values of the thicknesses.
Czech name
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Czech description
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Publication year
2003
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
19th Congress of the International Commission for Optics: Optics for the Quality of Life
ISBN
0-8194-4596-7
ISSN
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e-ISSN
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Number of pages
2
Pages from-to
831-832
Publisher name
SPIE - The International Society for Optical Engineering
Place of publication
Bellingham, Washington, USA
Event location
August 25-30, 2002, Florence, Italy
Event date
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Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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