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1.3 mum emission from InAs/GaAs quantum dots

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216224%3A14310%2F06%3A00018456" target="_blank" >RIV/00216224:14310/06:00018456 - isvavai.cz</a>

  • Result on the web

  • DOI - Digital Object Identifier

Alternative languages

  • Result language

    angličtina

  • Original language name

    1.3 mum emission from InAs/GaAs quantum dots

  • Original language description

    We report here the results of our photoluminescence study of a series of single quantum dot layer structures containing InxGa1?xAs strain reducing layers with different In concentration (from 0 % to 29 %), prepared by low pressure metal organic vapour phase epitaxy. These structures display a strong red shift of photoluminescence maxima from 1.25 mum to 1.45 mum at 300 K with increased In content in the ternary layer. The origin of the observed transitions has been explained using magnetophotoluminescence measurements and photoluminescence measurements for different pumping intensities at low temperature. Optical transition energies were calculated using a simple single-band effective mass model with energydependent effective mass. Comparing the calculated and measured energies, we can determine the thickness of the wetting layer and the sizes of the dots.

  • Czech name

    Emise na 1.3 mikrometru z InAs/GaAs kvantových teček

  • Czech description

    We report here the results of our photoluminescence study of a series of single quantum dot layer structures containing InxGa1?xAs strain reducing layers with different In concentration (from 0 % to 29 %), prepared by low pressure metal organic vapour phase epitaxy. These structures display a strong red shift of photoluminescence maxima from 1.25 mum to 1.45 mum at 300 K with increased In content in the ternary layer. The origin of the observed transitions has been explained using magnetophotoluminescence measurements and photoluminescence measurements for different pumping intensities at low temperature. Optical transition energies were calculated using a simple single-band effective mass model with energydependent effective mass. Comparing the calculated and measured energies, we can determine the thickness of the wetting layer and the sizes of the dots.

Classification

  • Type

    J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

  • CEP classification

    BM - Solid-state physics and magnetism

  • OECD FORD branch

Result continuities

  • Project

    Result was created during the realization of more than one project. More information in the Projects tab.

  • Continuities

    Z - Vyzkumny zamer (s odkazem do CEZ)

Others

  • Publication year

    2006

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    physica status solidi (c)

  • ISSN

    1610-1634

  • e-ISSN

  • Volume of the periodical

    3

  • Issue of the periodical within the volume

    11

  • Country of publishing house

    NL - THE KINGDOM OF THE NETHERLANDS

  • Number of pages

    4

  • Pages from-to

    3811

  • UT code for WoS article

  • EID of the result in the Scopus database