Optical characterization of non-stoichiometric silicon nitride films

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216224%3A14310%2F08%3A00025411" target="_blank" >RIV/00216224:14310/08:00025411 - isvavai.cz</a>

Alternative codes found

RIV/68378271:_____/08:00319767 RIV/61389005:_____/08:00319767

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Optical characterization of non-stoichiometric silicon nitride films

Original language description

Characterizations of non-stoichiometric silicon nitride films prepared by PECVD method onto silicon single crystal substrates are performed using variable angle spectroscopic ellipsometry and spectroscopic reflectometry and Rutherford backscattering spectrometry (RBS). The optical characterization employs a dispersion model based on the parameterization of the density of electronic states of the valence and conduction bands. The thin overlayers onto the upper boundaries of the films are taken into account. The values of the dispersion parameters of the SiNx films and thicknesses of these films and overlayers are determined. The ratios of Si and N atomic fractions in the individual films are evaluated using RBS. The results from the optical method and RBS are correlated.

Czech name

Optická charakterizace nestechiometrických vrstev nitridu křemíku

Czech description

Characterizations of non-stoichiometric silicon nitride films prepared by PECVD method onto silicon single crystal substrates are performed using variable angle spectroscopic ellipsometry and spectroscopic reflectometry and Rutherford backscattering spectrometry (RBS). The optical characterization employs a dispersion model based on the parameterization of the density of electronic states of the valence and conduction bands. The thin overlayers onto the upper boundaries of the films are taken into account. The values of the dispersion parameters of the SiNx films and thicknesses of these films and overlayers are determined. The ratios of Si and N atomic fractions in the individual films are evaluated using RBS. The results from the optical method and RBS are correlated.

Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

BH - Optics, masers and lasers

OECD FORD branch

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Project

<a href="/en/project/FT-TA3%2F142" target="_blank" >FT-TA3/142: Analysis of the optical properties of solar cells.</a><br>

Continuities

Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2008

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

physica status solidi (c)

ISSN

1610-1634

e-ISSN

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Volume of the periodical

5

Issue of the periodical within the volume

5

Country of publishing house

DE - GERMANY

Number of pages

4

Pages from-to

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UT code for WoS article

000256862500077

EID of the result in the Scopus database

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