Optical characteristics and UV modification of low-k materials

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216224%3A14310%2F08%3A00027845" target="_blank" >RIV/00216224:14310/08:00027845 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Optical characteristics and UV modification of low-k materials

Original language description

We present a study of optical characteristics in visible and vacuum ultra-violet range of porous low-k dielectric films (prepared by chemical vapor deposition), and the constituent materials: Carbon doped oxide (SiCOH) matrix and organic porogen. The materials have been deposited as thin film samples and cured by thermal annealing and UV irradiation for various times. The optical properties of the films have been studied by variable angle spectroscopic ellipsometry in range from 2 eV to 9 eV and the composition has been analyzed by Fourier-transformed infrared spectroscopy. The analysis of the optical response of the porous dielectric as a mixture of matrix material, porogen and voids shows existence of decomposed porogen residuals inside the pores, even for long curing times. It is observed that the variation of deposition and curing conditions can control the amount of porogen residuals and the final porosity.

Czech name

Optické vlastnosti a UV modifikace low-k materiálů

Czech description

We present a study of optical characteristics in visible and vacuum ultra-violet range of porous low-k dielectric films (prepared by chemical vapor deposition), and the constituent materials: Carbon doped oxide (SiCOH) matrix and organic porogen. The materials have been deposited as thin film samples and cured by thermal annealing and UV irradiation for various times. The optical properties of the films have been studied by variable angle spectroscopic ellipsometry in range from 2 eV to 9 eV and the composition has been analyzed by Fourier-transformed infrared spectroscopy. The analysis of the optical response of the porous dielectric as a mixture of matrix material, porogen and voids shows existence of decomposed porogen residuals inside the pores, even for long curing times. It is observed that the variation of deposition and curing conditions can control the amount of porogen residuals and the final porosity.

Type

D - Article in proceedings

CEP classification

BM - Solid-state physics and magnetism

OECD FORD branch

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Project

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Continuities

Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2008

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection

9th International Conference on Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008.

ISBN

978-1-4244-2185-5

ISSN

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e-ISSN

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Number of pages

4

Pages from-to

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Publisher name

IEEE

Place of publication

Beijing

Event location

Beijing

Event date

Jan 1, 2008

Type of event by nationality

CST - Celostátní akce

UT code for WoS article

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