Optimization of UV curing: Effect of wavelength on critical properties of low-k dielectrics

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216224%3A14310%2F09%3A00038408" target="_blank" >RIV/00216224:14310/09:00038408 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Optimization of UV curing: Effect of wavelength on critical properties of low-k dielectrics
Original language description
The results of recent investigations show that after UV curing of CVD SiCOH low-k films deposited with organic material (porogen) some amount of the porogen remains in the cured films in the form of non-volatile graphitized phase, known as porogen residue. These residues could influence leakage current and reliability. The goal of the present work is investigation of the different parameters of UV curing that can influence amount of the porogen residue. In this work we focused generally on the study ofthe amount of porogen residues as function of the wavelength of curing light and the porosity of the material (amount of deposited porogen). To study the curing dependence on the wavelength, we compared optical properties (measured by spectroscopic ellipsometry) and IR adsorption (measured by FTIR) of samples cured by 172 nm monochromatic light (lamp A) with samples cured by broadband source with wavelength more than 200 nm (lamp B).
Czech name
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Czech description
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Publication year
2009
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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