Deposition of hard thin films from HMDSO in atmospheric pressure dielectric barrier discharge

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216224%3A14310%2F10%3A00043949" target="_blank" >RIV/00216224:14310/10:00043949 - isvavai.cz</a>

Alternative codes found

RIV/68378271:_____/10:00348989 RIV/61389005:_____/10:00348989

Result on the web

—

DOI - Digital Object Identifier

—

Result language

angličtina

Original language name

Deposition of hard thin films from HMDSO in atmospheric pressure dielectric barrier discharge

Original language description

An atmospheric pressure dielectric barrier discharge burning in nitrogen with a small admixture of hexamethyldisiloxane (HMDSO) was used for the deposition of thin organosilicon films. The thin films were deposited on glass, silicon and polycarbonate substrates, and the substrate temperature during the deposition process was increased up to values within the range 25 - 150 C in order to obtain hard SiOx-like thin films.

Czech name

—

Czech description

—

Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

BL - Plasma physics and discharge through gases

OECD FORD branch

—

Project

—

Continuities

Z - Vyzkumny zamer (s odkazem do CEZ)<br>V - Vyzkumna aktivita podporovana z jinych verejnych zdroju

Publication year

2010

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Journal of Physics D: Applied Physics

ISSN

0022-3727

e-ISSN

—

Volume of the periodical

43

Issue of the periodical within the volume

22

Country of publishing house

GB - UNITED KINGDOM

Number of pages

8

Pages from-to

—

UT code for WoS article

000277871500011

EID of the result in the Scopus database

—