Optimized Plasma Enhanced Chemical Vapor Deposition from HMDSO/O2 for Surface Protection of Metals
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216224%3A14310%2F11%3A00050062" target="_blank" >RIV/00216224:14310/11:00050062 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Optimized Plasma Enhanced Chemical Vapor Deposition from HMDSO/O2 for Surface Protection of Metals
Original language description
The coatings were obtained from mixtures of hexamethyldisiloxane (HMDSO) with oxygen using a radio frequency capacitively coupled glow discharge at 13.56 MHz. Deposition of SiO2-like films from 8% HMDSO/O2 were found to have low internal stress, high fracture toughness and high hardness. Different pressures were used in order to obtain the best properties of the films. These dual purpose films can be used as a transparent protective coatings for aluminum substrates or a intermediate layer for harder coatings with good adhesion on stainless steel. The films were optically characterized by spectroscopic ellipsometry and reflectometry. Complete atomic composition was determined by ion beam analysis (RBS/ERDA). Infrared spectroscopy was used for the chemical bonds assessment. Hardness, elastic modulus and scratch test were performed. Surface energy measurements indicated hydrophilic character of the coatings, an important factor for industrial applications.
Czech name
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Czech description
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Classification
Type
O - Miscellaneous
CEP classification
BL - Plasma physics and discharge through gases
OECD FORD branch
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Result continuities
Project
<a href="/en/project/GD104%2F09%2FH080" target="_blank" >GD104/09/H080: Plasmachemical processes and their technological applications</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2011
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů