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Activation of silicon surface in atmospheric oxygen plasma

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216224%3A14310%2F12%3A00064633" target="_blank" >RIV/00216224:14310/12:00064633 - isvavai.cz</a>

  • Result on the web

  • DOI - Digital Object Identifier

Alternative languages

  • Result language

    angličtina

  • Original language name

    Activation of silicon surface in atmospheric oxygen plasma

  • Original language description

    In this contribution, the surface modification of crystalline silicon surface in oxygen atmosphere was investigated. Moreover the effect of crystallographic orientation and surface pre-cleaning of silicon surface were studied. c-Si wafers (100) and (111)oriented were cleaned in isopropyl alcohol or etched in HF solution and afterwards treated in Diffuse Coplanar Surface Barrier Discharge. Wettability, changes of surface properties and ageing effect of plasma treated surface were studied by means of contact angle measurement. It was proved, that modification of c-Si surface in oxygen plasma improve the wettability independent on crystallographic orientation and initial cleaning process.

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

  • CEP classification

    BL - Plasma physics and discharge through gases

  • OECD FORD branch

Result continuities

  • Project

    <a href="/en/project/ED2.1.00%2F03.0086" target="_blank" >ED2.1.00/03.0086: Regional R&D center for low-cost plasma and nanotechnology surface modifications</a><br>

  • Continuities

    P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Others

  • Publication year

    2012

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    CHEMICKÉ LISTY

  • ISSN

    0009-2770

  • e-ISSN

  • Volume of the periodical

    106

  • Issue of the periodical within the volume

    S

  • Country of publishing house

    CZ - CZECH REPUBLIC

  • Number of pages

    3

  • Pages from-to

    1488-1490

  • UT code for WoS article

  • EID of the result in the Scopus database