Modification of (111) and (100) silicon in atmospheric pressure plasma

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216224%3A14310%2F14%3A00078284" target="_blank" >RIV/00216224:14310/14:00078284 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1016/j.apsusc.2014.05.196" target="_blank" >http://dx.doi.org/10.1016/j.apsusc.2014.05.196</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.apsusc.2014.05.196" target="_blank" >10.1016/j.apsusc.2014.05.196</a>

Result language
angličtina
Original language name
Modification of (111) and (100) silicon in atmospheric pressure plasma
Original language description
In this paper the effect of plasma treatment in dependence of the different crystallographic orientation of silicon surface, (1 0 0) plane and (1 1 1) plane is studied. Plasma treatment was realized in atmospheric pressure plasma generated by diffuse coplanar surface barrier discharge in ambient air. The changes of surface morphology, wettability and chemical structure were investigated by means of the AFM measurement, contact angle measurement and XPS, respectively. It was proved that plasma rougheningof c-Si depends on the crystallographic orientation. The wettability of c-Si after plasma treatment was improved independently on the orientation however oxidation of Si surface was also observed. (C) 2014 Elsevier B.V. All rights reserved.
Czech name
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Czech description
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Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BL - Plasma physics and discharge through gases
OECD FORD branch
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Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2014
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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