Oxidation of Silicon Surface by DCSBD
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216224%3A14310%2F12%3A00064653" target="_blank" >RIV/00216224:14310/12:00064653 - isvavai.cz</a>
Result on the web
—
DOI - Digital Object Identifier
—
Alternative languages
Result language
angličtina
Original language name
Oxidation of Silicon Surface by DCSBD
Original language description
In the present work plasma oxidation of crystalline silicon (c-Si) surface in diffuse coplanar surface barrier discharge (DCSBD) generated at atmospheric pressure has been studied. Silicon surface has been oxidized in oxygen and argon plasma. The surfaceproperties have been studied by means scanning electron microscopy (SEM) and energy dispersive X-ray (EDX) analyses. It was found that thin layer of amorphous silicon dioxide during the short treatment time was formed. Oxidation by DCSBD could representnew alternative of a low cost and fast oxidation process.
Czech name
—
Czech description
—
Classification
Type
D - Article in proceedings
CEP classification
BL - Plasma physics and discharge through gases
OECD FORD branch
—
Result continuities
Project
<a href="/en/project/ED2.1.00%2F03.0086" target="_blank" >ED2.1.00/03.0086: Regional R&D center for low-cost plasma and nanotechnology surface modifications</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2012
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
NANOCON 2012, 4th INTERNATIONAL CONFERENCE
ISBN
9788087294321
ISSN
—
e-ISSN
—
Number of pages
4
Pages from-to
778-781
Publisher name
TANGER Ltd.
Place of publication
Ostrava
Event location
Brno
Event date
Nov 23, 2012
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
—