Properties of atmospheric pressure plasma oxidized layers on silicon wafers

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216224%3A14310%2F15%3A00082344" target="_blank" >RIV/00216224:14310/15:00082344 - isvavai.cz</a>

Result on the web

<a href="https://www.degruyter.com/view/journals/chem/open-issue/article-10.1515-chem-2015-0047/article-10.1515-chem-2015-0047.xml" target="_blank" >https://www.degruyter.com/view/journals/chem/open-issue/article-10.1515-chem-2015-0047/article-10.1515-chem-2015-0047.xml</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1515/chem-2015-0047" target="_blank" >10.1515/chem-2015-0047</a>

Result language

angličtina

Original language name

Properties of atmospheric pressure plasma oxidized layers on silicon wafers

Original language description

In this research a new process of plasma oxidation of crystalline silicon at room temperature is studied. The plasma oxidation was carried out using Diffuse Coplanar Surface Barrier Discharge (DCSBD) operating in ambient air and oxygen at atmospheric pressure. The influence of exposition time, plasma parameters and crystallographic orientation of silicon on oxidized layers and their dielectric properties were investigated. Thickness, structure and morphology of these layers were studied by ellipsometry,infrared absorption spectroscopy and scanning electron microscopy. During the treatment time, from 1 to 30 minutes, oxidized layers were obtained with thickness from 1 to 10 nm. Their roughness depends on the crystallographic orientation of silicon surface and exposure time. Electrical parameters of the prepared layers indicate the presence of an intermediate layer between silicon substrate and the oxidized layer.

Czech name

—

Czech description

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Type

J_imp - Article in a specialist periodical, which is included in the Web of Science database

CEP classification

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OECD FORD branch

10305 - Fluids and plasma physics (including surface physics)

Project

<a href="/en/project/ED2.1.00%2F03.0086" target="_blank" >ED2.1.00/03.0086: Regional R&D center for low-cost plasma and nanotechnology surface modifications</a><br>

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year

2015

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Open Chemistry

ISSN

2391-5420

e-ISSN

—

Volume of the periodical

13

Issue of the periodical within the volume

1

Country of publishing house

PL - POLAND

Number of pages

6

Pages from-to

376-381

UT code for WoS article

000355403100045

EID of the result in the Scopus database

2-s2.0-84982737848