Spatial Atomic Layer Deposition: performance of low temperature H20 and O3 oxidant chemistry for flexible electronics encapsulation.
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216224%3A14310%2F15%3A00094216" target="_blank" >RIV/00216224:14310/15:00094216 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1116/1.4914079" target="_blank" >http://dx.doi.org/10.1116/1.4914079</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1116/1.4914079" target="_blank" >10.1116/1.4914079</a>
Alternative languages
Result language
angličtina
Original language name
Spatial Atomic Layer Deposition: performance of low temperature H20 and O3 oxidant chemistry for flexible electronics encapsulation.
Original language description
Water and oxygen were compared as oxidizing agents for the Al2O3 atomic layer deposition process using spatial atomic layer deposition reactor. The influence of the precursor dose on the deposition rate and refractive index, which was used as a proxy for film density, was measured as a function of residence time, defined as the time which the moving substrate spent within one precursor gas zone. The effect of temperature on the growth characteristics was also measured. The water-based process gave faster deposition rates and higher refractive indices but the ozone process allowed deposition to take place at lower temperatures while still maintaining good film quality. In general, processes based on both oxidation chemistries were able to produce excellent moisture barrier films with water vapor transmission rate levels of 10(-4) g/m(2) day measured at 38 degrees C and 90% of relative humidity on polyethylene naphthalate substrates.
Czech name
—
Czech description
—
Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BE - Theoretical physics
OECD FORD branch
—
Result continuities
Project
—
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2015
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
J. Vac. Sci. Technol. A
ISSN
0734-2101
e-ISSN
—
Volume of the periodical
33
Issue of the periodical within the volume
3
Country of publishing house
US - UNITED STATES
Number of pages
8
Pages from-to
"nestrankovano"
UT code for WoS article
000355741800029
EID of the result in the Scopus database
—