Amorphous gallium oxide grown by low-temperature PECVD
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216224%3A14310%2F18%3A00102357" target="_blank" >RIV/00216224:14310/18:00102357 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1116/1.5018800" target="_blank" >http://dx.doi.org/10.1116/1.5018800</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1116/1.5018800" target="_blank" >10.1116/1.5018800</a>
Alternative languages
Result language
angličtina
Original language name
Amorphous gallium oxide grown by low-temperature PECVD
Original language description
Owing to the wide application of metal oxides in energy conversion devices, the fabrication of these oxides using conventional, damage-free, and upscalable techniques is of critical importance in the optoelectronics community. Here, theauthors demonstrate the growth of hydrogenated amorphous gallium oxide (a-GaOx:H) thin-films by plasma-enhanced chemical vapor deposition (PECVD) at temperatures below 200°C. In this way, conformal films are deposited at high deposition rates, achieving high broadband transparency, wide band gap (3.5-4 eV), and low refractive index (1.6 at 500 nm). The authors link this low refractive index to the presence of nanoscale voids enclosing H2, as indicated by electron energy-loss spectroscopy. This work opens the path for further metal-oxide developments by low-temperature, scalable and damage-free PECVD processes.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)
Result continuities
Project
<a href="/en/project/LO1411" target="_blank" >LO1411: Development of Centre for low-cost plasma and nanotechnology surface modification</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2018
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Journal of Vacuum Science and Technology A
ISSN
0734-2101
e-ISSN
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Volume of the periodical
36
Issue of the periodical within the volume
2
Country of publishing house
US - UNITED STATES
Number of pages
7
Pages from-to
1-7
UT code for WoS article
000426978500043
EID of the result in the Scopus database
2-s2.0-85042872472