Aluminum tantalum oxide thin films deposited at low temperature by pulsed direct current reactive magnetron sputtering for dielectric applications

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216224%3A14310%2F24%3A00135309" target="_blank" >RIV/00216224:14310/24:00135309 - isvavai.cz</a>

Result on the web

<a href="https://doi.org/10.1016/j.vacuum.2023.112881" target="_blank" >https://doi.org/10.1016/j.vacuum.2023.112881</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.vacuum.2023.112881" target="_blank" >10.1016/j.vacuum.2023.112881</a>

Result language

angličtina

Original language name

Aluminum tantalum oxide thin films deposited at low temperature by pulsed direct current reactive magnetron sputtering for dielectric applications

Original language description

This research aims at studying aluminum tantalum oxide thin films (AlxTayOz) deposited at low temperature for dielectric applications. These ternary oxide layers are synthesized at 180 °C by physical vapor deposition (PVD), specifically the mid-frequency pulsed direct current reactive magnetron sputtering. The deposition process uses targets made of a mixture of aluminum and tantalum in various proportions. Four target compositions are studied containing 95 at.%, 90 at.%, 80 at.%, and 70 at.% of aluminum, corresponding to 5 at.%, 10 at.%, 20 at.%, and 30 at.% of tantalum, respectively. The ternary oxide thin films of AlxTayOz are compared to aluminum oxide (AlxOz) and tantalum oxide (TayOz) layers produced in the same experimental conditions. The AlxTayOz thin films are dense, uniform, and amorphous regardless of the experimental conditions used in this study. Their chemical composition changes as a function of the target composition. The oxygen flow used during deposition also affects the chemical composition of the oxide layers and the deposition rate. The oxide thin films with tantalum are deposited at higher deposition rates and contain more oxygen. Tantalum also promotes the amorphization of the oxide layers. The highest dielectric strength is measured for the thin film containing a low amount of tantalum combined with a high amount of oxygen.

Czech name

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Czech description

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Type

J_imp - Article in a specialist periodical, which is included in the Web of Science database

CEP classification

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OECD FORD branch

10305 - Fluids and plasma physics (including surface physics)

Project

Result was created during the realization of more than one project. More information in the Projects tab.

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year

2024

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Vacuum

ISSN

0042-207X

e-ISSN

1879-2715

Volume of the periodical

221

Issue of the periodical within the volume

March

Country of publishing house

GB - UNITED KINGDOM

Number of pages

14

Pages from-to

1-14

UT code for WoS article

001138128000001

EID of the result in the Scopus database

2-s2.0-85179890961