In-situ Monitoring of Thin Film Depositon Process Using Optical Emission Spectroscopy
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26310%2F12%3APU99278" target="_blank" >RIV/00216305:26310/12:PU99278 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
In-situ Monitoring of Thin Film Depositon Process Using Optical Emission Spectroscopy
Original language description
Plasma enhanced chemical vapour deposition (PECVD) has become more and more popular for thin film deposition, especially using organosilicon precursors. This work focuses on high density films deposited by PECVD using hexamethyldisiloxane precursor. Optical emission spectroscopy was used for plasma diagnostics. Oxygen transmission rate and infrared spectra of deposited layers were measured. Optimal experimental conditions for low carbon content layers and layers with good barrier properties were determined.
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
BL - Plasma physics and discharge through gases
OECD FORD branch
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Result continuities
Project
<a href="/en/project/DF11P01OVV004" target="_blank" >DF11P01OVV004: Plasma chemical processes and technologies for conservation of archaeological metallic objects</a><br>
Continuities
S - Specificky vyzkum na vysokych skolach
Others
Publication year
2012
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
Europhysics Conference Abstracts
ISBN
2-914771-74-6
ISSN
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e-ISSN
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Number of pages
2
Pages from-to
"P3.5.71"-"P3.5.72"
Publisher name
EPS
Place of publication
Lisbon
Event location
Viana do Castelo
Event date
Jul 10, 2012
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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