Plasma Enhanced Chemical Vapour Deposition of SiO2-Like Films: Monitoring and Optimization of the Process
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26310%2F12%3APU105243" target="_blank" >RIV/00216305:26310/12:PU105243 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Plasma Enhanced Chemical Vapour Deposition of SiO2-Like Films: Monitoring and Optimization of the Process
Original language description
This work focuses on high density thin films deposited by PECVD using hexamethyldisiloxane precursor. Optical emission spectroscopy was used for plasma diagnostics. Oxygen transmission rate and infrared spectra of deposited layers were measured. Optimalexperimental conditions for low carbon content layers and layers with good barrier properties were determined.
Czech name
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Czech description
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Classification
Type
O - Miscellaneous
CEP classification
AC - Archaeology, anthropology, ethnology
OECD FORD branch
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Result continuities
Project
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Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2012
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů