The Thin Film Capacitors with AlN Dielectric

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F10%3A00171381" target="_blank" >RIV/68407700:21230/10:00171381 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

The Thin Film Capacitors with AlN Dielectric

Original language description

The work is focused on thin film technologies especially on sputtering of dielectric thin film layers. The AlN dielectric layer was prepared by reactive high frequency sputtering from aluminum target in nitrogen atmosphere. Dielectric layers were deposited at different conditions of sputtering. The power plasma generator and time of sputtering were changed in useful range. Part of work is concerned to investigation of dependence of electrical capacity of thick film capacitors on thickness of dielectriclayer. Thickness and thus electrical capacity are depending on distance between target and substrate. Thickness of dielectric layer was measured by using of confocal microscope.

Czech name

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Czech description

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Type

D - Article in proceedings

CEP classification

JA - Electronics and optoelectronics

OECD FORD branch

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Project

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Continuities

Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2010

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection

NANOCON 2010

ISBN

978-80-87294-18-5

ISSN

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e-ISSN

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Number of pages

4

Pages from-to

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Publisher name

Tanger

Place of publication

Ostrava

Event location

Olomouc

Event date

Oct 12, 2010

Type of event by nationality

EUR - Evropská akce

UT code for WoS article

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