The Nonconductive Sputtered Thin Film Layer

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F19%3A00342614" target="_blank" >RIV/68407700:21230/19:00342614 - isvavai.cz</a>
Result on the web
<a href="http://147.228.94.30/images/PDF/Rocnik2019/Cislo2_2019/r13c2c1.pdf" target="_blank" >http://147.228.94.30/images/PDF/Rocnik2019/Cislo2_2019/r13c2c1.pdf</a>
DOI - Digital Object Identifier
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Result language
angličtina
Original language name
The Nonconductive Sputtered Thin Film Layer
Original language description
The work is focused on topic of dielectrics layers prepared by thin film layer technology, specifically by sputtering. Set of samples of thin film capacitors was prepared. Samples differ by different conditions of preparation of dielectric layer. Dielectric layers were deposited by sputtering of Al2O3on glass substrate. The measured parameters were the electrical capacity and thickness of the dielectric layer. Thickness was obtained with help of device using the stylus method. The main evaluated parameters are the capacity and thickness of thin film capacitors in dependence on the deposition process conditions–plasma power and deposition time.
Czech name
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Czech description
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Project
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Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2019
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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