Determination of refractive index of crystalline silicon in the infrared region on the basis of interference pattern observed in thick slab
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216224%3A14310%2F25%3A00141249" target="_blank" >RIV/00216224:14310/25:00141249 - isvavai.cz</a>
Result on the web
<a href="https://doi.org/10.1016/j.infrared.2025.105889" target="_blank" >https://doi.org/10.1016/j.infrared.2025.105889</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.infrared.2025.105889" target="_blank" >10.1016/j.infrared.2025.105889</a>
Alternative languages
Result language
angličtina
Original language name
Determination of refractive index of crystalline silicon in the infrared region on the basis of interference pattern observed in thick slab
Original language description
The precise values of the refractive index of crystalline silicon are determined in the infrared region based on the measurements of the interference pattern in 0.25 mm thick wafer. The interference pattern observed for one particular incidence angle allows us to determine the optical thickness precisely, however, the wafer thickness and refractive index, whose product gives the optical thickness, can be determined with much worse accuracy. This limitation could be overcome by using several incidence angles because if the dependence of the period of interference pattern on the incidence angle is considered, it is possible to determine both the thickness and refractive index with high accuracy. The FTIR infrared ellipsometer is used for measurements at oblique incidence angles, while the FTIR spectrophotometer is utilized for measurements at near-normal incidence. To correctly interpret the experimental data, it is necessary to consider the influence of the finite spectral resolution and beam divergence of the instruments and the thickness non-uniformity of the sample. These effects significantly alter the observed interference patterns. The formulae needed to accomplish this task are derived in this work. The values of the refractive index determined using the proposed method for the crystalline silicon show differences smaller than 10-3 from the values obtained by the minimum deviation method.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10305 - Fluids and plasma physics (including surface physics)
Result continuities
Project
<a href="/en/project/LM2023039" target="_blank" >LM2023039: R&D centre for plasma and nanotechnology surface modifications</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2025
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Infrared Physics and Technology
ISSN
1350-4495
e-ISSN
1879-0275
Volume of the periodical
149
Issue of the periodical within the volume
September
Country of publishing house
NL - THE KINGDOM OF THE NETHERLANDS
Number of pages
11
Pages from-to
1-11
UT code for WoS article
001488821100001
EID of the result in the Scopus database
2-s2.0-105004265952