Optical functions of silicon from reflectance and ellipsometry on silicon-on-insulator and homoepitaxial samples

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216224%3A14740%2F15%3A00086016" target="_blank" >RIV/00216224:14740/15:00086016 - isvavai.cz</a>

Result on the web

<a href="http://scitation.aip.org/content/aip/journal/jap/118/19/10.1063/1.4936126" target="_blank" >http://scitation.aip.org/content/aip/journal/jap/118/19/10.1063/1.4936126</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1063/1.4936126" target="_blank" >10.1063/1.4936126</a>

Result language

angličtina

Original language name

Optical functions of silicon from reflectance and ellipsometry on silicon-on-insulator and homoepitaxial samples

Original language description

The optical properties of silicon have been determined from 0.2 to 6.5 eV at room temperature, using reflectance spectra of silicon-on-insulator (SOI) and ellipsometric spectra of homoepitaxial samples. Optimized Fabry-Perot-type SOI resonators exhibit high finesse even in near ultraviolet. Very high precision values of the real part of the refractive index are obtained in infrared up to a photon energy of 1.3 eV. The spectra of the extinction coefficient, based on observations of light attenuation, extend to 3.2 eV due to measurements on SOI layers as thin as 87 nm. These results allowed us to correct spectroellipsometric data on homoepitaxial samples for the presence of reduced and stabilized surface layers.

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

BM - Solid-state physics and magnetism

OECD FORD branch

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Project

<a href="/en/project/ED1.1.00%2F02.0068" target="_blank" >ED1.1.00/02.0068: Central european institute of technology</a><br>

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year

2015

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Journal of Applied Physics

ISSN

0021-8979

e-ISSN

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Volume of the periodical

118

Issue of the periodical within the volume

19

Country of publishing house

US - UNITED STATES

Number of pages

6

Pages from-to

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UT code for WoS article

000367722400036

EID of the result in the Scopus database

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