A simple quality factor for characterization of thin silicon films

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F08%3A00320321" target="_blank" >RIV/68378271:_____/08:00320321 - isvavai.cz</a>
Alternative codes found
RIV/68378271:_____/08:00341936
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
A simple quality factor for characterization of thin silicon films
Original language description
Silicon thin films were grown by plasma enhanced chemical vapor deposition at high-pressure (700 Pa), high-power (4? W/cm2) depletion regime using multi-hole cathode. Series of samples were deposited by varying hydrogen/silane ratio or plasma power to study evolution of film structure and transport properties near a-Si:H/?c-Si:H transition. We suggest a simple "?c-Si:H layer quality factor" based on the ratio of subgap optical absorption ? (1.4 eV)/? (1 eV) measured by constant photocurrent method. Thisratio correlates well with the values of ambipolar diffusion lengths measured by surface photovoltage method perpendicularly to the substrate, i.e., in the direction of the collection of the photogenerated carriers in solar cells.
Czech name
Jednoduchý faktor kvality pro charakterizaci tenkých vrstev křemíku]
Czech description
Jednoduchý faktor kvality pro charakterizaci tenkých vrstev křemíku založený na poměru podgapové absorbce při energiích ? (1.4 eV)/? (1 eV) měřený metodou konstantního proudu je navržen jako snadný parametr pro charakterizaci tenkých křemíkových vrstev pro fotovoltaiku.

Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year
2008
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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