SiC characterization using optical and x-ray techniques

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216224%3A14740%2F15%3A00087334" target="_blank" >RIV/00216224:14740/15:00087334 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

SiC characterization using optical and x-ray techniques

Original language description

*Goal: Using methods available at Department of Condensed Matter Physics, characterize optical and crystallographic properties of silicon carbide. Description: ON Semiconductor Czech Republic is running a proof-of-concept project evaluating the potentialof silicon carbide devices. Since SiC material properties are signif- icantly different from those of silicon, their knowledge is important to consider the future fabrication process. The goal of this project is the feasibility evaluation of optical andX-ray methods for SiC study, as well as basic characterization of optical properties and crystallographic quality of provided samples. Project milestones are: Characterize SiC optical properties in the range critical for wafer fab tools (UV-VIS- NIR), investigate non-uniformity of optical parameters on SiC wafer. Evaluate potential of other optical characterization techniques (IR, Raman).

Czech name

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Czech description

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Type

V_souhrn - Summary research report

CEP classification

BM - Solid-state physics and magnetism

OECD FORD branch

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Project

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Continuities

N - Vyzkumna aktivita podporovana z neverejnych zdroju

Publication year

2015

Confidentiality

C - Předmět řešení projektu podléhá obchodnímu tajemství (§ 504 Občanského zákoníku), ale název projektu, cíle projektu a u ukončeného nebo zastaveného projektu zhodnocení výsledku řešení projektu (údaje P03, P04, P15, P19, P29, PN8) dodané do CEP, jsou upraveny tak, aby byly zveřejnitelné.

Number of pages

17

Place of publication

Brno

Publisher/client name

ON Semiconductor CR

Version

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