Local topography of optoelectronic substrates prepared by dry plasma etching process

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F15%3APU112284" target="_blank" >RIV/00216305:26220/15:PU112284 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1117/12.2176367" target="_blank" >http://dx.doi.org/10.1117/12.2176367</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1117/12.2176367" target="_blank" >10.1117/12.2176367</a>

Result language
angličtina
Original language name
Local topography of optoelectronic substrates prepared by dry plasma etching process
Original language description
In this work, the etch rate of silicon carbide and aluminum oxide were studied as a function of the angle etching material and flow of plasma. Al2O3 and SiC are important materials in the design of optical and electronic devices and the topography of the wafers has a large influence on the device quality. Argon was applied for the dry etching of Al2O3 and SiC wafers. The wafer slope for highest obtained etch is defined. Atomic force microscopy was used to good morphology control of etched wafers. Statistical and correlation analysis was applied to estimate the surface perfection. Interferometry allowed to control etching rate.
Czech name
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Czech description
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Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
—
OECD FORD branch
20201 - Electrical and electronic engineering

Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>S - Specificky vyzkum na vysokych skolach

Publication year
2015
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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