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Novel applications of and solutions in the SOI technology

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F26821532%3A_____%2F15%3A%230000094" target="_blank" >RIV/26821532:_____/15:#0000094 - isvavai.cz</a>

  • Result on the web

    <a href="http://dms.fzu.cz/" target="_blank" >http://dms.fzu.cz/</a>

  • DOI - Digital Object Identifier

Alternative languages

  • Result language

    angličtina

  • Original language name

    Novel applications of and solutions in the SOI technology

  • Original language description

    The BGSOI technology (Direct Bond and Grind-back SOI) - the basic method of making SOI wafers ? will do the trick for reasonable price. After wafer bonding and bond strengthening annealing, the material of the device wafer is removed by means of mechanical grinding and the surface of the final device layer is finished by polishing. The typically achievable uniformity of the device layer thickness is +/- 0.5 ?m. The material of the supporting wafer is removed by Taiko grinding and silicon etching and theburied oxide is removed by HF etching. The resulting die thickness keeps the exceptional thickness uniformity of BGSOI, which is an order of magnitude better compared to conventional variability of Taiko grinding (> +/- 5.0 ?m) used with conventional process of device manufacturing. Novel solutions of aspects specific for SOI are discussed as well. These include gettering and stress engineering.

  • Czech name

  • Czech description

Classification

  • Type

    D - Article in proceedings

  • CEP classification

    JJ - Other materials

  • OECD FORD branch

Result continuities

  • Project

    <a href="/en/project/TH01010419" target="_blank" >TH01010419: Development of Novel Technologies for Trench Insulated Gate Bipolar Transistors (TIGBT) Manufacturing</a><br>

  • Continuities

    P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Others

  • Publication year

    2015

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Article name in the collection

    DEVELOPMENT OF MATERIALS SCIENCE IN RESEARCH AND EDUCATION - BOOK OF ABSTRACTS OF THE 25 th JOINT SEMINAR

  • ISBN

    978-80-89597-28-4

  • ISSN

  • e-ISSN

  • Number of pages

    66

  • Pages from-to

    44

  • Publisher name

    Slovak Expert Group of Solid State Chemistry and Physics

  • Place of publication

    Kezmarske Zlaby (SK)

  • Event location

    Kezmarske Zlaby (SK)

  • Event date

    Aug 31, 2015

  • Type of event by nationality

    EUR - Evropská akce

  • UT code for WoS article