R&D of x-ray and spectroscopic methods for characterization of TIGBT device

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216224%3A14740%2F15%3A00087335" target="_blank" >RIV/00216224:14740/15:00087335 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
R&D of x-ray and spectroscopic methods for characterization of TIGBT device
Original language description
*Goal: Utilization of characterization methods at CEITEC MU for R&D of Trench-Insulated-Gate-Bipolar-Transistor (TIGBT) Device Description: ON SEMICONDUCTOR with CEITEC MU have have started R&D of TIGBT technology. ON SEMICONDUCTOR asked CEITEC MU for advanced material characterization of TIGBT wafers and devices and for feasibility of new methods for this characterization. Milestones: Perform characterization of TIGBT wafers (including SOI substrates). Evaluation of feasibility of x-ray topography and scattering for defects analysis. Evaluation of feasibility of Raman spectroscopy for analysis of defects and of internal strain. Evaluation of feasibility of other methods for TIGBT characterization. Modeling of temperature distribution in Si wafer during laser annealing. Samples of TIGBT devices and wafers (including SOI substrates) will be supplied by ON SEMICONDUCTOR.*
Czech name
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Czech description
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Publication year
2015
Confidentiality
C - Předmět řešení projektu podléhá obchodnímu tajemství (§ 504 Občanského zákoníku), ale název projektu, cíle projektu a u ukončeného nebo zastaveného projektu zhodnocení výsledku řešení projektu (údaje P03, P04, P15, P19, P29, PN8) dodané do CEP, jsou upraveny tak, aby byly zveřejnitelné.

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