Evaluation of TIGBT field stop layer generated by helium implantation

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F26821532%3A_____%2F16%3AN0000007" target="_blank" >RIV/26821532:_____/16:N0000007 - isvavai.cz</a>
Result on the web
<a href="http://ieeexplore.ieee.org/document/7805938/" target="_blank" >http://ieeexplore.ieee.org/document/7805938/</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1109/ASDAM.2016.7805938" target="_blank" >10.1109/ASDAM.2016.7805938</a>

Result language
angličtina
Original language name
Evaluation of TIGBT field stop layer generated by helium implantation
Original language description
R. Pechal, L. Dorňák, J. Vavro, A. Kozelský and A. Klimsza, Evaluation of TIGBT field stop layer generated by helium implantation, 11th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM), Smolenice, 2016, pp. 235-238. doi: 10.1109/ASDAM.2016.7805938: A helium implantation is a common technique used for electron and hole lifetime control in semiconductor devices. Siemieniec [1] shows that suitable annealing conditions after the helium implantation lead to an increased conductivity of N-type silicon substrate in the affected area. Based on these observations a possibility of using helium implantation for generation of the TIGBT field stop layer was evaluated. Required concentration profiles were prepared for test wafers, however, a decreased conductivity in the helium implantation area was observed when using production wafers with standard process flow. The root cause of this discrepancy is diffusion of nitrogen and hydrogen atoms into the silicon during previous diffusion operations and an interaction of these atoms with the implanted helium.
Czech name
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Czech description
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Project
<a href="/en/project/TH01010419" target="_blank" >TH01010419: Development of Novel Technologies for Trench Insulated Gate Bipolar Transistors (TIGBT) Manufacturing</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2016
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
2016 11th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM)
ISBN
978-1-5090-3083-5
ISSN
—
e-ISSN
—
Number of pages
4
Pages from-to
235 - 238
Publisher name
IEEE
Place of publication
Smolenice, Slovakia
Event location
Smolenice, Slovakia
Event date
Nov 13, 2016
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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