Raman scattering study of Ge nanocrystals embedded into SiO2
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F00%3A00000041" target="_blank" >RIV/00216275:25310/00:00000041 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Raman scattering study of Ge nanocrystals embedded into SiO2
Original language description
Raman scattering study of Ge nanocrystals embedded into SiO2 was measured and optimized conditions for the measurement of Ge nanocrystals were discussed
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
CA - Inorganic chemistry
OECD FORD branch
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Result continuities
Project
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Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2000
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
The 47th Spring Meeting, The Japan Society of Applied Physics and Related Societies
ISBN
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ISSN
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e-ISSN
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Number of pages
1
Pages from-to
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Publisher name
The Japan Society of Applied Physics
Place of publication
Japan
Event location
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Event date
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Type of event by nationality
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UT code for WoS article
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