Hydrogenated amorphous silicon based p-i-n structures with Si and Ge nanocrystals in i-layers

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F16%3A00471134" target="_blank" >RIV/68378271:_____/16:00471134 - isvavai.cz</a>
Alternative codes found
RIV/67985858:_____/16:00471134
Result on the web
<a href="http://dx.doi.org/10.1117/12.2266436" target="_blank" >http://dx.doi.org/10.1117/12.2266436</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1117/12.2266436" target="_blank" >10.1117/12.2266436</a>

Result language
angličtina
Original language name
Hydrogenated amorphous silicon based p-i-n structures with Si and Ge nanocrystals in i-layers
Original language description
Si and Ge nanocrystals were created into i-layers of p–i–n structures based on thin a-Si:H films. The nanocrystals were formed using pulsed laser annealing with an excimer XeCl laser generating pulses with the wavelength of 308 nm and the duration of 15 ns. The laser treatment allowed the formation of the nanoscrystals with the average size from 2 to 5 nm, depending on the laser-annealing parameters. The size of nanocrystals (in Si and Ge layers) and their Si-Ge composition (in GeSi alloy structures) was estimated through Raman spectra analysis. The structural parameters of Si, Ge and GeSi nanocrystals were also studied using electron microscopy and atomic force microscopy. Current–voltage measurements showed that the p–i–n structures exhibit diode characteristics. The diodes with Si nanocrystals produced the electroluminescence peak in the infrared range (0.9–1.0 eV), which spectral position was dependent on the laser annealing conditions.
Czech name
—
Czech description
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Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2016
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
International Conference on Micro- and Nanoelectronics - 2016. ICMNE 2016
ISBN
978-151060949-5
ISSN
0277-786X
e-ISSN
—
Number of pages
12
Pages from-to
1-12
Publisher name
SPIE
Place of publication
Bellingham
Event location
Zvenigorod
Event date
Oct 3, 2016
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
000393152900013

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