Optical properties of p–i–n structures based on amorphous hydrogenated silicon with silicon nanocrystals formed via nanosecond laser annealing
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F16%3A00467514" target="_blank" >RIV/68378271:_____/16:00467514 - isvavai.cz</a>
Alternative codes found
RIV/67985858:_____/16:00467514
Result on the web
<a href="http://dx.doi.org/10.1134/S1063782616070101" target="_blank" >http://dx.doi.org/10.1134/S1063782616070101</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1134/S1063782616070101" target="_blank" >10.1134/S1063782616070101</a>
Alternative languages
Result language
angličtina
Original language name
Optical properties of p–i–n structures based on amorphous hydrogenated silicon with silicon nanocrystals formed via nanosecond laser annealing
Original language description
Si nanocrystals are formed in the i layers of p–i–n structures based on a-Si:H using pulsed laser annealing. An excimer XeCl laser with a wavelength of 308 nm and a pulse duration of 15 ns is used. The laser fluence is varied from 100 to 250 mJ/cm2 (above the threshold). The nanocrystal sizes are estimated by analyzing Raman spectra using the phonon confinement model. The average is from 2.5 to 3.5 nm, depending on the laser annealing parameters. Current–voltage measurements show that the fabricated p–i–n structures possess diode characteristics. An electroluminescence signal in the infrared (IR) range is detected for the p–i–n structures with Si nanocrystals; the peak position (0.9–1 eV) varies with the laser-annealing parameters. Radiative transitions are presumably related to the nanocrystal–amorphous matrix interface states. The proposed approach can be used to produce light-emitting diodes on non-refractory substrates.
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
<a href="/en/project/LH12236" target="_blank" >LH12236: Quantum size effect in optoelectronic properties of nanostructures embedded in semiconductor layers.</a><br>
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2016
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Semiconductors
ISSN
1063-7826
e-ISSN
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Volume of the periodical
50
Issue of the periodical within the volume
7
Country of publishing house
RU - RUSSIAN FEDERATION
Number of pages
6
Pages from-to
935-940
UT code for WoS article
000379173600016
EID of the result in the Scopus database
2-s2.0-84978166207