Electroluminiscence of Silicon Nanocrystals in p-i-n Diodes Structure

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21340%2F06%3A04126689" target="_blank" >RIV/68407700:21340/06:04126689 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Electroluminiscence of Silicon Nanocrystals in p-i-n Diodes Structure

Original language description

A new method of fabrication of nanocrystalline silicon-based light-emitting-devices is introduced. Si nanocrystals are derived from combustion or pyrolysis of silane and etched subsequently in a two-phase solution of HF. The p&#8211;i&#8211;n diodes havean active layer (20&#8211;60 nm) of Si nanocrystals sandwiched between thin isolating layers of SiO2 or a-Si : H and a top-layer of p+ doped silicon, the substrate being of n+ Si. For both types of structures, electroluminescence is observed under forward bias exceeding 5 V and the spectrum consists of a broad band (due to a large size distribution of Si nanocrystals) centred around 650 nm and giving a yellowish appearance when observed by naked-eye. The integrated electroluminescence intensity growthswith the square of applied bias.

Czech name

Není k dispozici

Czech description

Není k dispozici

Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

JA - Electronics and optoelectronics

OECD FORD branch

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Project

<a href="/en/project/KAN400670651" target="_blank" >KAN400670651: Study of interfaces between metal nanoparticles and InP for gas sensing and radiations detection</a><br>

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year

2006

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Thin Solid Films

ISSN

0040-6090

e-ISSN

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Volume of the periodical

515

Issue of the periodical within the volume

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Country of publishing house

CH - SWITZERLAND

Number of pages

3

Pages from-to

775-777

UT code for WoS article

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EID of the result in the Scopus database

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