Defects in Bi(2)Te(3-x)Se(x) single crystals

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F10%3A39881705" target="_blank" >RIV/00216275:25310/10:39881705 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Defects in Bi(2)Te(3-x)Se(x) single crystals

Original language description

Single crystals of a ternary system based on Bi2Te3-xSex (nominally x = 0.0-0.2) were prepared using the Bridgman technique. Samples with varying content of Se were characterized by the measurement of lattice parameters, electrical conductivity sigma (perpendicular to c) and Hall coefficient RH(B parallel to c). The actual concentration of selenium c(Se) in the samples was determined using atomic emission spectroscopy. While a small selenium concentration enhances the free hole concentration P after passing a maximum, the hole concentration decreases at higher selenium concentrations. The extreme-like dependence P = f(c(Se)) is explained in terms of a change of the native defect concentration due to the substitution of selenium atoms by tellurium ones.

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

BM - Solid-state physics and magnetism

OECD FORD branch

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Project

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Continuities

Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2010

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Radiation Effects and Defects in Solids

ISSN

1042-0150

e-ISSN

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Volume of the periodical

165

Issue of the periodical within the volume

3

Country of publishing house

GB - UNITED KINGDOM

Number of pages

5

Pages from-to

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UT code for WoS article

000275126400003

EID of the result in the Scopus database

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