Doping and Defect Structure of Tetradymite-Type Crystals

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F10%3A39881716" target="_blank" >RIV/00216275:25310/10:39881716 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Doping and Defect Structure of Tetradymite-Type Crystals

Original language description

Nonstoichiometry of tetradymite-type crystals A(2)(V)B(3)(VI) that are grown from stoichiometric melts leads to the formation of native defects in the crystal lattice (predominantly antisite defects, A(B)(-1) and vacancies V(B)(+2) in the anion sublattice). This paper summarizes the basic ideas concerning a point defect model in A(2)(V)B(3)(VI) crystals. It turns out that a variety of doping elements interact with the native defects. Such interactions alter the concentration of free charge carriers, affect the doping efficiency, and modify the transport properties. Detailed understanding of the defect structure in tetradymite-type crystals is very important as it impacts on the efficiency of these materials when used as active elements in thermoelectric coolers.

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

BM - Solid-state physics and magnetism

OECD FORD branch

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Project

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Continuities

Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2010

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Journal of Electronic Materials

ISSN

0361-5235

e-ISSN

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Volume of the periodical

39

Issue of the periodical within the volume

9

Country of publishing house

US - UNITED STATES

Number of pages

3

Pages from-to

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UT code for WoS article

000281393000144

EID of the result in the Scopus database

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