THE CRYSTAL GROWTH KINETICS IN GeS2
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F12%3A39895979" target="_blank" >RIV/00216275:25310/12:39895979 - isvavai.cz</a>
Result on the web
—
DOI - Digital Object Identifier
—
Alternative languages
Result language
angličtina
Original language name
THE CRYSTAL GROWTH KINETICS IN GeS2
Original language description
Optical measurement of GeS2 crystal growth in undercooled melts was carried out by using optical microscopy. The length of crystals was measured isothermally by different temperature in the range 398-437 °C as time dependence. This behavior is characteristic for crystal growth controlled by crystal-liquid interface kinetics. The temperature dependence of reduced growth rate UR provides information about the growth sites at the interface. There are three basic models suitable for description of crystal growth in undercooled melt. Positive curvature of reduced growth rate depending on undercooling is typical for two-dimensional surface nucleated growth. The activation energy of crystal growth of GeS2 EG = 167 +- 8 kJ?mol-1 was obtained from the slope oflogarithm of crystal growth rate u plotted versus reciprocal temperature 1/T. The crystal growth kinetics of GeS2 thin films will be discussed.
Czech name
—
Czech description
—
Classification
Type
O - Miscellaneous
CEP classification
CF - Physical chemistry and theoretical chemistry
OECD FORD branch
—
Result continuities
Project
<a href="/en/project/EE2.3.09.0104" target="_blank" >EE2.3.09.0104: Education and Development of Research Team for Centre of Material Science Pardubice</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2012
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů